| Revista: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000158903 |
| ISSN: | 0103-9733 |
| Autores: | Tessler, Leandro R1 |
| Instituciones: | 1Universidade Estadual de Campinas, Instituto de Fisica "Gleb Wataghin", Campinas, Sao Paulo. Brasil |
| Año: | 1999 |
| Periodo: | Dic |
| Volumen: | 29 |
| Número: | 4 |
| Paginación: | 616-622 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico |
| Resumen en inglés | A review of the current status of research on Er 3+ doped hydrogenated amorphous silicon (a-Si:H) is presented. Er has been introduced in a-Si:H and a-SiOx:H by ion implantation, co-sputtering and PECVD. In all cases, the characteristic atomic-like intra-4f 4I13/2 ® 4I15/2 photoluminescence emission at ~ 1.54 µm is observed at room temperature. The Er 3+ luminescence probability is determined by the local neighborhood of the ions. Therefore, local probes like EXAFS and Mössbauer spectroscopy have yielded very important information. A discussion of excitation processes, electroluminescence, and electronic doping effects, is also presented |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Física de materia condensada, Semiconductores, Silicio, Erbio, Espectroscopía, Electroluminiscencia, Fotoluminiscencia |
| Keyword: | Physics and astronomy, Condensed matter physics, Semiconductors, Silicon, Erbium, Spectroscopy, Electroluminescence, Photoluminescence |
| Texto completo: | Texto completo (Ver HTML) |
