| Revista: | Revista mexicana de física |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000381241 |
| ISSN: | 0035-001X |
| Autors: | Domínguez Jiménez, M.A1 Flores Gracia, J1 Luna Flores, A1 Martínez Juárez, J1 Luna López, A1 Alcántara Iniesta, Salvador1 Rosales Quintero, P2 Reyes Betanzo, Claudia2 |
| Institucions: | 1Benemérita Universidad Autónoma de Puebla, Instituto de Ciencias, Puebla. México 2Instituto Nacional de Astrofísica, Optica y Electrónica, Departamento de Electrónica, Tonantzintla, Puebla. México |
| Any: | 2015 |
| Període: | Mar-Abr |
| Volum: | 61 |
| Número: | 2 |
| Paginació: | 123-126 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico, teórico |
| Resumen en inglés | The application of Zinc Oxide (ZnO) films by ultrasonic spray pyrolysis at 250, 300 and 450°C as active layer in thin-film Transistors (TFTs) is presented. The performance of the devices shows an unexpected behavior in function of the deposition temperature. The ZnO films were deposited from 0.2 M precursor solution of Zinc acetate in methanol, using air as carrier gas. 70nm-thick ZnO was deposited over 100 nm-thick aluminum electrodes patterned on 50 nm-thick thermally grown SiO2 on highly doped Si wafers. The highly doped Si wafer was used as the gate electrode. The ZnO TFTs at 250°C showed field-effect mobilities around of 0.05 cm2/Vs and threshold voltages of 8 V |
| Disciplines | Física y astronomía |
| Paraules clau: | Física, Películas delgadas, Propiedades eléctricas, Transistores |
| Keyword: | Physics and astronomy, Physics, Thin films, Electric properties, Transistors |
| Text complet: | Texto completo (Ver PDF) |
