| Revista: | Revista mexicana de física |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000460718 |
| ISSN: | 0035-001X |
| Autors: | Irshad Ahamed, M1 Ahamed, Mansoor2 Kumar, K. Sathish3 Sivaranjani, A4 |
| Institucions: | 1E.G.S. Pillay Engineering College, Department of Electronics and Communication Engineering, Nagapattinam, Tamil Nadu. India 2Chinese Academy of Science, Institute of Optics, Changchun, Jilin. China 3Sri Sivasubramaniya Nadar College of Engineering, Department of Chemical Engineering, Kalavakkam, Tamil Nadu. India 4Nagoya University, Graduate School of Engineering, Nagoya, Aichi. Japón |
| Any: | 2022 |
| Període: | Jul-Ago |
| Volum: | 68 |
| Número: | 4 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico, teórico |
| Resumen en inglés | Semiconductors with wide bandgaps play an important role in the use of optoelectronic and energy related devices due to their electron confinement, high optical transparency and tunable electrical conductivity. Therefore, in this study, the quantum confinement effect of chalcogenide semiconductor nanocrystals such as ZnS, ZnSe, ZnTe, SnS, SnSe and SnTe is studied using the Brus model (by effective mass approximation approach), the hyperbolic model and the cohesive energy model. The obtained results indicate that the value of the energy bandgap differs from the bulk crystals related to the quantum confinement effect. These verdicts confirm the quantum confinement effects of materials and their potential applications in optoelectronic devices. Theoretical findings are compared with the corresponding valid experimental data |
| Disciplines | Física y astronomía |
| Paraules clau: | Física, Banda de energía, Calcogenuro, Puntos cuánticos, Zinc, Estaño |
| Keyword: | Physics, Energy bandgap, Chalcogenide, Quantum dots, Zinc, Tin |
| Text complet: | Texto completo (Ver HTML) Texto completo (Ver PDF) |
