| Revista: | Superficies y vacío |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000404701 |
| ISSN: | 1665-3521 |
| Autores: | Díaz Reyes, J1 Castillo Ojeda, R2 Galván Arellano, M2 Peña Sierra, R2 |
| Instituciones: | 1Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, Puebla. México 2Instituto Politécnico Nacional, Centro de Investigación y de Estudios Avanzados, México, Distrito Federal. México |
| Año: | 2002 |
| Periodo: | Dic |
| Volumen: | 15 |
| Paginación: | 22-25 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico |
| Resumen en inglés | MOCVD AlGaAs thin films were characterized using Raman and Hall measurements. The AlGaAs thin films were grown by MOCVD using metallic arsenic instead of arsine as the arsenic precursor. Some difficulties in the growth of AlGaAs by MOCVD are the composition homogeneity of the layers and the oxygen and carbon incorporation during the growth process. The composition homogeneity of the films was demonstrated by the Raman measurements. Hall measurements on the samples showed highly compensated material. Samples grown at temperatures lower than 750°C were highly resistive. Independently of the V/III ratio; the samples grown at higher temperatures were n-type. As the growth temperature is increased the layers compensation decreases but the Raman spectra show the layers become more defective |
| Disciplinas: | Física y astronomía, Ingeniería, Química |
| Palabras clave: | Física de materia condensada, Ingeniería de materiales, Ingeniería química, Química organometálica, Películas delgadas, Espectroscopía Raman, Semiconductores, Arsénico, Galio, Aluminio |
| Keyword: | Physics and astronomy, Engineering, Chemistry, Condensed matter physics, Chemical engineering, Materials engineering, Organometallic chemistry, Thin films, Raman spectroscopy, Semiconductors, Arsenic, Gallium, Aluminum |
| Texto completo: | Texto completo (Ver PDF) |
