| Revista: | Superficies y vacío |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000377823 |
| ISSN: | 1665-3521 |
| Autores: | Reyes Barranca, M. A1 Mendoza Acevedo, S1 Flores Nava, L. M1 Avila García, A1 Gopar Castillo, A. A1 González Vidal, J. L2 |
| Instituciones: | 1Instituto Politécnico Nacional, Centro de Investigación y de Estudios Avanzados, México, Distrito Federal. México 2Universidad Autónoma del Estado de Hidalgo, Pachuca, Hidalgo. México |
| Año: | 2008 |
| Periodo: | Sep |
| Volumen: | 21 |
| Número: | 3 |
| Paginación: | 6-10 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Experimental, aplicado |
| Resumen en inglés | Gas sensor structures using metal oxides as sensing layers are widely used, but commonly the resistance variation of these layers is used to correlate this parameter with gas concentration. Here, we show that the sensitivity of a Floating–gate MOSFET (FGMOSFET) can be used also in gas detection by taking advantage of those ions derived from the chemical reaction between either reducing or oxidizing gases and a sensing layer, like metal oxides. This principle has been used in pH meter of solutions but by using a non–standard technology. This work suggests a structure that can be designed and fabricated by using standard CMOS technology. It should be stressed that this technology is compatible with MEMS. In this design, semiconducting metal oxides heated to temperatures up to 400 °C can be used. In order to assess such a possibility, the results from an equivalent circuit using a conventional MOSFET and an iron oxide–pyrrole film as the sensing element are shown |
| Disciplinas: | Ingeniería |
| Palabras clave: | Ingeniería de instrumentos, Sistemas microelectromecánicos, Sensores de gases, Semiconductores, Oxidos metálicos |
| Keyword: | Engineering, Instrumentation engineering, Microelectromechanical systems, Gas sensors, Semiconductors, Metal oxides |
| Texto completo: | Texto completo (Ver HTML) |
