| Revista: | Superficies y vacío |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000365815 |
| ISSN: | 1665-3521 |
| Autores: | Millán Flores, H1 López Callejas, R1 Granda Gutiérrez, E.E1 Piedad Benítez, A. de la1 Muñóz Castro, A.E2 Valencia, R2 Peña Eguiluz, R2 Mercado Cabrera, A2 Barocio, S.R2 |
| Instituciones: | 1Instituto Tecnológico de Toluca, Toluca, Estado de México. México 2Instituto Nacional de Investigaciones Nucleares, México, Distrito Federal. México |
| Año: | 2009 |
| Periodo: | Jun |
| Volumen: | 22 |
| Número: | 2 |
| Paginación: | 17-22 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Experimental, aplicado |
| Resumen en inglés | Pure nitrogen, 30% argon/70% nitrogen, 50% argon/50% nitrogen, 70% argon/30% nitrogen plasma immersion ion implantation (PIII) processes onto aluminium samples has been performed at 2 to 6 kV negative bias and 50 to 150 us pulse widths, the sample temperature being established at 400 °C. Incident fluencies of ~1018 atoms/cm2 were used to investigate the diffusion behaviour and AlN phase formation in the samples. X–ray diffraction (XRD) shows the formation of the cubic phase of AlN with both pure nitrogen and all the mixtures whereas the hexagonal phase becomes apparent only in the 50% mixture and in pure nitrogen. The characteristic peak of AlN has also been determined by Raman spectroscopy. The microhardness was found to be always maximal with the 50% nitrogen 50% argon mixture |
| Disciplinas: | Ingeniería, Química |
| Palabras clave: | Ingeniería de materiales, Ingeniería química, Aluminio, Implantación de iones, Dureza, Difracción de rayos X, Microscopía electrónica de barrido |
| Keyword: | Engineering, Chemistry, Chemical engineering, Materials engineering, Aluminum, Ion implantation, Hardness, X-ray diffraction, Scanning electron microscopy |
| Texto completo: | Texto completo (Ver HTML) |
