Metallic behaviour at YBaCuO7/Zas interfaces (G=Ga, Al)



Título del documento: Metallic behaviour at YBaCuO7/Zas interfaces (G=Ga, Al)
Revista: Revista mexicana de física
Base de datos: PERIÓDICA
Número de sistema: 000365807
ISSN: 0035-001X
Autores: 1
1
Instituciones: 1Instituto Politécnico Nacional, Centro de Investigación y de Estudios Avanzados, México, Distrito Federal. México
Año:
Periodo: Sep-Oct
Volumen: 59
Número: 5
Paginación: 493-497
País: México
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Analítico, teórico
Resumen en inglés We present the electronic band structure of the interfaces YBa2Cu3O7/GaAs (direct gap) and YBa2Cu3O7/A1As (indirect gap) in different configurations calculated using the Density Functional Theory as in the Wien2k code within the local density approximation. We have projected the density of states at the atomic layers forming the interface. We concentrated on the semiconductor side. The four first atomic layers in the semiconductor side of the interface present a clear metallic behaviour. We found for both semiconductors considered that it converges towards the bulk atomic-layer projected density of states a few atomic layers from the interface. We considered an ideal non-reconstructed interface in the (001) direction first and let it relax using the corresponding option in the Wien2k code. The behaviour does not change in an important way and we found but small deviations from the ideal case in the Density of States of the relaxed interface. It is important to relax the interface since the metallic behaviour of the semiconductor side of the could have been suppressed which is the most interesting result of this work. The behaviour at the interface is interesting and could be used in several technological applications and it opens, for example, the possibility to induce superconductivity on the semiconductor side of the metal/semiconductor interface
Disciplinas: Física y astronomía
Palabras clave: Física atómica y molecular,
Física de materia condensada,
Semiconductores,
Interfases,
Estructura electrónica
Keyword: Physics and astronomy,
Atomic and molecular physics,
Condensed matter physics,
Semiconductors,
Interfaces,
Electronic structure
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