| Revista: | Revista mexicana de física |
| Base de datos: | |
| Número de sistema: | 000592447 |
| ISSN: | 0035-001X |
| Autores: | Douara, A.1 Rabehi, A.2 Baitiche, O.4 |
| Instituciones: | 1Tissemsilt University, Faculty of Science and Technology, Argelia 2Université Djillali Liabès de Sidi Bel Abbés, Laboratoire de Micro-électronique Appliquée, Sidi Bel Abbés. Argelia 3Ziane Achour University of Djelfa, Faculty of Science and Technology, Djelfa. Argelia 4Ammar Thlidji University of Laghouat, Laboratory of Semi-conductors and Functional materials, Argelia |
| Año: | 2023 |
| Periodo: | May-Jun |
| Volumen: | 69 |
| Número: | 3 |
| País: | México |
| Idioma: | Inglés |
| Resumen en inglés | Here, we study a simulation model of In0.17Al0.83N/GaN passivated high electron mobility transistors (HEMTs) on SiC substrate. The research focused systematically on the effect of AlN interlayer on the electronic and electric characteristics. The 2D-electron gas density of In0.17Al0.83N/AlN/GaN HEMTs is investigated through the dependence on various AlN layer thickness. We report calculations of I-V characteristics, with 1.5 nm AlN thickness. We find the highest maximum output current of 1.81 A/mm at Vgs = 1 V, and more than 450 mS/mm as a transconductance peak. The Results are in agreement with experimental data. |
| Keyword: | HEMTs, AlN interlayer, 2D-electron gas |
| Texto completo: | Texto completo (Ver PDF) Texto completo (Ver HTML) |
