Cu(In,Ga)Se2 thin films processed by co-evaporation and their application into solar cells



Título del documento: Cu(In,Ga)Se2 thin films processed by co-evaporation and their application into solar cells
Revista: Revista mexicana de física
Base de datos: PERIÓDICA
Número de sistema: 000370734
ISSN: 0035-001X
Autores: 1
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Instituciones: 1Instituto Politécnico Nacional, Escuela Superior de Física y Matemáticas, México, Distrito Federal. México
2Instituto Politécnico Nacional, Centro de Investigación y de Estudios Avanzados, México, Distrito Federal. México
3Instituto Politécnico Nacional, Escuela Superior de Ingeniería Química e Industrias Extractivas, México, Distrito Federal. México
4Universidad Autónoma de la Ciudad de México, México, Distrito Federal. México
Año:
Periodo: Oct
Volumen: 57
Número: 5
Paginación: 435-440
País: México
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Aplicado, descriptivo
Resumen en inglés Polycrystalline Cu(In,Ga)Se2 (CIGS) solar cells are attractive because low cost techniques can be used to obtain high efficiency thin film photovoltaic devices. Several research groups around the world have developed CIGS/CdS solar cells with efficiencies larger than 15% [1] using evaporation, making it an attractive and reliable technique for thin film deposition. Our PVD system is provided with MBE-type Knudsen cells to deposit CIGS thin films on glass/Molibdenum (Mo) substrates. The deposition conditions for each metal source have been established by doing a deposition profile of temperature data vs. growth rate by co-evaporation to obtain CIGS thin film for solar cells. Characterization of the co-evaporated CIGS thin films was performed by X-ray diffraction (X-RD), scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS) techniques. Good quality polycrystalline films were obtained as shown by X-RD patterns. SEM micrographs show films having a very uniform appearance with large grain sizes (~1 µm). Photoluminescence (PL) studies on CIGS samples with different Ga and Cu concentrations (Ga/Ga+In) = 0.25 and 0.34 and (Cu/In+Ga) = 0.83, 0.88 and 0.94) have been performed. The EDS results have shown that is possible to control very precisely the CIGS thin film composition using these Knudsen cells. Film thicknesses of ~3-4 µm, were measured with an Ambios profilemeter XP 100 stylus type. A conversion efficiency of 10.9 % has been achieved for solar cells made from the co-evaporated absorbers
Disciplinas: Física y astronomía,
Ingeniería
Palabras clave: Física de materia condensada,
Ingeniería de materiales,
Cobre policristalino,
Coevaporación,
Películas delgadas,
Celdas solares
Keyword: Physics and astronomy,
Engineering,
Condensed matter physics,
Materials engineering,
Polycrystalline Copper,
Co-evaporation,
Thin films,
Solar cells
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