| Revista: | Materials research |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000312420 |
| ISSN: | 1516-1439 |
| Autores: | Carvalho-Junior, Wilson de1 Bernussi, Ayrton Andre Furtado, Mario Tosi Gobbi, Angelo Luiz Cotta, Monica A1 |
| Instituciones: | 1Universidade Estadual de Campinas, Instituto de Fisica, Campinas, Sao Paulo. Brasil |
| Año: | 1999 |
| Periodo: | Abr |
| Volumen: | 2 |
| Número: | 2 |
| Paginación: | 49-57 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Descriptivo |
| Resumen en inglés | We have investigated the optical and the structural properties of strained In1-xGaxAsyP1-y/InP and strain compensated In1-xGaxAsyP1-y/In1-zGazAsqP1-q/InP multi-quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy at different growth conditions. Our results indicate an increase of the compositional fluctuation of quaternary materials as the alloy composition moves from the outer spinodal isotherm into the miscibility gap region. In1-xGaxAsyP1-y layers grown at high tensile strained values exhibit a three-dimensional-like growth mode. Strain compensated structures revealed the presence of a broad photoluminescence emission band below the fundamental quantum well transition, well defined elongated features along the [011] direction and interface undulations. All these effects were found to be strongly dependent on the growth temperature and the number of wells |
| Disciplinas: | Ingeniería |
| Palabras clave: | Ingeniería de control, Ingeniería química, Semiconductores, Pozos cuánticos, Cristalización |
| Keyword: | Engineering, Chemical engineering, Control engineering, Semiconductors, Quantum wells, Crystallization |
| Texto completo: | Texto completo (Ver HTML) |
