| Revista: | Journal of applied research and technology |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000427805 |
| ISSN: | 1665-6423 |
| Autores: | Acevedo Luna, Armando1 Bernal Correa, Roberto2 Montes Monsalve, Jorge3 Morales Acevedo, Arturo1 |
| Instituciones: | 1Instituto Politécnico Nacional, Centro de Investigación y de Estudios Avanzados, Ciudad de México. México 2Universidad del Sinú, Facultad de Ciencias e Ingeniería, Montería, Córdoba. Colombia 3Universidad Nacional de Colombia, Facultad de Ciencias Exactas y Naturales, Manizales, Caldas. Colombia |
| Año: | 2017 |
| Periodo: | Dic |
| Volumen: | 15 |
| Número: | 6 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Experimental, aplicado |
| Resumen en inglés | Polycrystalline thin film solar cells made with absorber materials such as CdTe, CIGS, CZTS and metalorganic halides (perovskites) are currently important alternatives for the silicon solar cell technology, which still dominates the photovoltaic market. Then, it is important to have tools which can be used to design this kind of solar cells. For this purpose, we have developed a unified simple analytical model that can be applied to thin film solar cells. The model is based on the basic physics of hetero-junction devices, but it takes into consideration that the space charge region can extend along the major part of the cell length, particularly for very thin cells, causing important effects that typically are not observed in conventional junction devices. Photo-generated carriers are collected by electric field-drift instead of diffusion, and simultaneously strong recombination at this region may dominate the electrical I-V characteristic of the cell. Since the space-charge region width varies with the applied voltage, the illumination current density and the saturation dark current density are no longer independent of the voltage as is assumed for conventional solar cells. When the model is applied to CIS and CdTe solar cells as examples, it is found that it is possible to design very thin film solar cells (absorber less than 1 μm thick) with high efficiencies, whenever the recombination velocity at the back surface becomes small (102 cm/s), instead of the high recombination velocities present at ohmic contacts (107 cm/s). This fact implies the cost reduction of thin film solar cells by reducing absorber material thickness, and therefore it poses a challenge to develop deposition methods for very thin CdTe and CIGS absorber materials without pinholes, so that improved efficiencies are obtained when the surface recombination velocity is made small at the back by having a p+ or an electron blocking region before the ohmic contact. This result also explai |
| Disciplinas: | Ingeniería |
| Palabras clave: | Ingeniería de energéticos, Energía solar, Celdas solares, Películas delgadas, Telúrido de cadmio |
| Keyword: | Energy engineering, Solar energy, Solar cells, Thin films, Cadmium telluride |
| Texto completo: | Texto completo (Ver HTML) Texto completo (Ver PDF) |
