Temperature-Dependent Photoluminescence Spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs Single Quantum Wells under Different Excitation Intensities
Título del documento: Temperature-Dependent Photoluminescence Spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs Single Quantum Wells under Different Excitation Intensities
Revista: Brazilian journal of physics
Base de datos: PERIÓDICA
Número de sistema: 000403526
ISSN: 0103-9733
Autores: 1
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Instituciones: 1Universidade Estadual de Londrina, Departamento de Fisica, Londrina, Parana. Brasil
2Centre National de la Recherche Scientifique, Laboratoire de Photonique et de Nanostructures, Marcoussis, Essonne. Francia
Año:
Periodo: Dic
Volumen: 37
Número: 4
Paginación: 1212-1219
País: Brasil
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Analítico
Resumen en inglés The mechanism for low-temperature photoluminescence (PL) emissions in GaAsSb/AlGaAs and GaAsSbN/GaAs strained-layer single quantum wells (SQWs), grown by molecular-beam epitaxy, is studied in detail, using PL spectroscopy as a function of temperature and excitation intensity. In all samples, the PL peak energy as well as the full width at half maximum (FWHM), as a function of temperature, present anomalous behaviors, i.e., the PL peak energy shows a successive red/blue/redshift (S-shaped behavior) and the FWHM shows a successive blue/red/blueshift (“inverted S-shaped curve”) with increasing temperature. At sufficiently low excitation intensity and in a narrow temperature interval (50 – 80 K), the nitrogen-containing samples present two clear competitive PL peaks. The low-energy PL mechanism (8 – 80 K) is dominated by localized PL transitions, while the high-energy PL mechanism is dominated by the ground state (e1-hh1) PL transition. Additionally, these PL peaks show different temperature dependence with the low-energy PL peak, showing a stronger redshift than the high-energy PL peak. A competition process between localized and delocalized excitons is used to discuss these PL properties
Disciplinas: Física y astronomía
Palabras clave: Física de materia condensada,
Ingeniería de materiales,
Semiconductores,
Pozos cuánticos,
Fotoluminiscencia
Keyword: Physics and astronomy,
Condensed matter physics,
Materials engineering,
Semiconductors,
Quantum wells,
Photoluminescence
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