| Revista: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000159307 |
| ISSN: | 0103-9733 |
| Autores: | Dargam, T.G1 Capaz, R.B Koiller, Belita |
| Instituciones: | 1Universidade Federal do Rio de Janeiro, Instituto de Física, Rio de Janeiro. Brasil |
| Año: | 1999 |
| Periodo: | Dic |
| Volumen: | 29 |
| Número: | 4 |
| Paginación: | 834-838 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico |
| Resumen en inglés | Adopting a real-space tight-binding supercell approach, we investigate interface roughness effects in semiconductor heterostructures. AlAs/GaAs/AlAs (001) QWs of average width W are considered, in which one of the interfaces is planar and the other has a shape defined by periodic steps with amplitude A and wavelength l. The oscillator strength f of the fundamental transition in the well describes the optical nature of the heterostructures. By investigating the wavefunctions as a function of the interface parameter A, we conclude that the f behavior with A is an optical signature of the quantum well to quantum wire crossover in the heterostructures. Recently, photoluminescence experiments showed that hydrostatic pressure produces an increase in the optical eficiency of heterostructures in which the interfaces present a high degree of roughness. In order to investigate this optical behavior, we discuss hydrostatic pressure effects on rough-interface heterostructures |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Física de materia condensada, Semiconductores, Heteroestructuras, Pozos cuánticos, Hilos cuánticos, Aspereza de interface |
| Keyword: | Physics and astronomy, Condensed matter physics, Semiconductors, Heterostructures, Quantum wells, Quantum wires, Interface roughness |
| Texto completo: | Texto completo (Ver HTML) |
