Revista: | Brazilian journal of physics |
Base de datos: | PERIÓDICA |
Número de sistema: | 000408755 |
ISSN: | 0103-9733 |
Autores: | Toginho-Filho, D.O1 Dias, I.F.L1 Duarte, J.L1 Laureto, E1 Harmand, Jean C2 |
Instituciones: | 1Universidade Estadual de Londrina, Departamento de Fisica, Londrina, Parana. Brasil 2Centre National de la Recherche Scientifique, Laboratoire de Photonique et de Nanostructures, Marcoussis, Essonne. Francia |
Año: | 2006 |
Periodo: | Dic |
Volumen: | 36 |
Número: | 4A |
Paginación: | 1250-1256 |
País: | Brasil |
Idioma: | Inglés |
Tipo de documento: | Artículo |
Enfoque: | Experimental, analítico |
Resumen en inglés | We present a comparative study carried out on the optical and electrical characteristics of undoped and Te doped AlGaAsSb/AlAsSb Bragg mirrors with 6.5 pairs of layers and bulk undoped and Te doped AlGaAsSb epilayers alloys lattice matched on InP, grown by molecular beam epitaxy, using SIMS, photoluminescence, reflectivity and IxV techniques. The temperature dependence of PL transitions observed in the Bragg mirrors are similar to that observed in bulk samples and associated with the donor and acceptor recombinations in alloys with electrostatic potential fluctuations described by quasi-donor-acceptor-pair (QDAP) models. We verified by SIMS the presence of a macro fluctuation in the Te profile concentrations in the growth direction of the doped Bragg mirror. The influence of doping, alloy and macrofluctuation of incorporated Te on the optical and electrical properties of doped Bragg mirror is analyzed. The AlGaAs/AlAsSb seems a very attractive option for VCSEL technology |
Disciplinas: | Física y astronomía, Ingeniería |
Palabras clave: | Física, Física de materia condensada, Ingeniería de materiales, Semiconductores, Espejos dieléctricos |
Keyword: | Physics and astronomy, Engineering, Condensed matter physics, Particle physics and quantum fields, Physics, Materials engineering, Semiconductors, Dielectric mirrors |
Texto completo: | Texto completo (Ver PDF) |