| Revista: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000158905 |
| ISSN: | 0103-9733 |
| Autores: | Scholl, Eckehard1 |
| Instituciones: | 1Technical University of Berlin, Institute for Theoretical Physics, Berlín. Alemania |
| Año: | 1999 |
| Periodo: | Dic |
| Volumen: | 29 |
| Número: | 4 |
| Paginación: | 627-638 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico |
| Resumen en inglés | We review recent theoretical advances in the modeling and computer simulation of complex non-linear spatio- temporal dynamics of charge carriers in semiconductors. Among the particularly instructive examples are investigations of current filaments in doped semiconductors in the regime of low temperature impurity breakdown. The nascence of current filaments in thin GaAs films with different contact geometries, including circular samples (Corbino disks) with symmetry breaking instabilities, is investigated, and the role of global couplings induced by the operating load circuit is analysed |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Física de materia condensada, Semiconductores, Dinámica no lineal, Simulación, Películas delgadas |
| Keyword: | Physics and astronomy, Condensed matter physics, Semiconductors, Nonlinear dynamics, Simulation, Thin films |
| Texto completo: | Texto completo (Ver HTML) |
