| Revista: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000159238 |
| ISSN: | 0103-9733 |
| Autores: | Ribeiro, E1 Jäggi, R Heinzel, T Ensslin, K Ribeiro, G. Medeiros Petroff, P.M |
| Instituciones: | 1Universidade Estadual de Campinas, Instituto de Fisica "Gleb Wataghin", Campinas, Sao Paulo. Brasil 2Solid State Physics Laboratory, Zurich. Suiza 3University of California, Materials Department, Santa Barbara, California. Estados Unidos de América |
| Año: | 1999 |
| Periodo: | Dic |
| Volumen: | 29 |
| Número: | 4 |
| Paginación: | 742-745 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico |
| Resumen en inglés | We report the observation of a metal-insulator transition in zero magnetic eld in a two dimensional electron gas under the influence of a plane of InAs self-assembled quantum dots located at 30 Å below the AlGaAs/GaAs heterointerface. The transition is observed as a function of temperature and electric field at B=0. A scaling analysis yields exponents similar to those obtained for Si MOSFET's . We suggest that the disorder introduced by the quantum dots plays a crucial role |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Física de materia condensada, Semiconductores, Puntos cuánticos, Gas de electrones, Transición metal-aislante, Heteroestructuras |
| Keyword: | Physics and astronomy, Condensed matter physics, Semiconductors, Quantum dots, Electron gas, Metal-insulator transition, Heterostructures |
| Texto completo: | Texto completo (Ver HTML) |
