InGaAs/AlGaInAs/InP Laser with Compressively Strained Multiquantum Well Layers for High Speed Modulation Bandwidth



Título del documento: InGaAs/AlGaInAs/InP Laser with Compressively Strained Multiquantum Well Layers for High Speed Modulation Bandwidth
Revista: Brazilian journal of physics
Base de datos: PERIÓDICA
Número de sistema: 000309111
ISSN: 0103-9733
Autores: 1


2

Instituciones: 1Telecomunicacoes Brasileiras S.A, Centro de Pesquisa e Desenvolvimento, Campinas, Sao Paulo. Brasil
2Deutsche Telekom, Darmstadt, Hessen. Alemania
Año:
Periodo: Dic
Volumen: 27
Número: 4
Paginación: 411-416
País: Brasil
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Experimental, aplicado
Resumen en inglés The modulation frequency response of compressively strained multiquantum well (MQW) lasers grown with an InGaAs/AlGaInAs/InP heterostructure and emitting at the wavelength of 1.55 is presented. The laser devices processed with the mushroom-stripe buried structure present a high frequency 3 dB bandwidth above 20 GHz. The frequency response was measured with the small signal modulation technique. The logarithmic subtraction method was employed to extract the intrisic frequency response of the MQW active layer, providing the determination of important laser parameters: the differential gain, the nonlinear gain coefficient and the maximum 3 dB frequency bandwidth
Disciplinas: Ingeniería
Palabras clave: Ingeniería de telecomunicaciones,
Pozos cuánticos,
Láser,
Respuesta de frecuencias,
Ancho de banda
Keyword: Engineering,
Telecommunications engineering,
Quantum wells,
Laser,
Frequency response,
Bandwidth
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