| Revista: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000159241 |
| ISSN: | 0103-9733 |
| Autores: | Piamonteze, Cinthia1 Tessler, Leandro R Alves, Martins M.C Tolentino, H |
| Instituciones: | 1Universidade Estadual de Campinas, Instituto de Fisica "Gleb Wataghin", Campinas, Sao Paulo. Brasil 2Laboratorio Nacional de Luz Sincrotron, Campinas, Sao Paulo. Brasil |
| Año: | 1999 |
| Periodo: | Dic |
| Volumen: | 29 |
| Número: | 4 |
| Paginación: | 756-759 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico |
| Resumen en inglés | We report a comparative Extended X-Ray Fine Structure (EXAFS) study of Er in a-Si:H prepared by Er implantation in a-Si:H and by co-sputtering undergoing the same cumulative annealing processes. It was found that the Er environment in as-implanted samples is formed by Si atoms, which are replaced by oxygen under annealing. In the co-sputtered samples, the initial low coordination oxygen environment evolves under thermal treatment to an Er2O3 -like neighborhood |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Física de materia condensada, Optica, Semiconductores, Luminiscencia, Rayos X, Estructura fina, Silicio, Erbio |
| Keyword: | Physics and astronomy, Condensed matter physics, Optics, Semiconductors, Luminescence, X-rays, Fine structure, Silicon, Erbium |
| Texto completo: | Texto completo (Ver HTML) |
