Effects of in-plane magnetic fields on the electronic cyclotron effective mass and Landé factor in GaAs-(Ga,Al)As quantum wells



Título del documento: Effects of in-plane magnetic fields on the electronic cyclotron effective mass and Landé factor in GaAs-(Ga,Al)As quantum wells
Revista: Brazilian journal of physics
Base de datos: PERIÓDICA
Número de sistema: 000310486
ISSN: 0103-9733
Autores: 1
2
3
Instituciones: 1Universidad de La Habana, Departamento de Física Teórica, La Habana. Cuba
2Instituto Superior Politécnico "José Antonio Echeverría", Departamento de Física, La Habana. Cuba
3Universidade Estadual de Campinas, Instituto de Fisica, Campinas, Sao Paulo. Brasil
Año:
Periodo: Sep
Volumen: 36
Número: 3B
Paginación: 858-861
País: Brasil
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Experimental
Resumen en inglés The dependence of the electron Landé g-factor on carrier confinement in quantum wells recently gained both experimental and theoretical interest. The g factor of electrons in GaAs-(Ga,Al)As quantum wells is of special interest, as it changes its sign at a certain value of the well width. In the present work, the effects of an in-plane magnetic field on the cyclotron effective mass and on the Landé g<FONT FACE=Symbol>&#094;</FONT>-factor in single GaAs-(Ga,Al)As quantum wells are studied. Theoretical calculations are performed in the framework of the effective-mass and non-parabolic-band approximations. The Ogg-McCombe Hamiltonian is used for the conduction-band electrons in the semiconductor heterostructure, and the Landé g<FONT FACE=Symbol>&#094;</FONT>-factor theoretically evaluated is found in good agrement with available experimental measurements
Disciplinas: Física y astronomía
Palabras clave: Física de partículas y campos cuánticos,
Campo magnético,
Factor G,
Ciclotrón,
Pozos cuánticos
Keyword: Physics and astronomy,
Particle physics and quantum fields,
Magnetic field,
G factor,
Cyclotron,
Quantum wells
Texto completo: Texto completo (Ver HTML)