Ab intio calculation of linear and nonlinear optical properties of semiconductor structures



Título del documento: Ab intio calculation of linear and nonlinear optical properties of semiconductor structures
Revista: Brazilian journal of physics
Base de datos: PERIÓDICA
Número de sistema: 000158909
ISSN: 0103-9733
Autores: 1

Instituciones: 1Friedrich Schiller Universitat, Jena, Gera. Alemania
Año:
Periodo: Dic
Volumen: 29
Número: 4
Paginación: 643-651
País: Brasil
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Analítico
Resumen en inglés The theoretical and numerical approaches are discussed for ab initio calculations of optical properties. The density functional theory (DFT) combined with the local-density approximation (LDA) allows the calculation of the geometry of crystalline solids and their surfaces with a precision of about one percent. The DFT-LDA band structure and single-electron states therefore provide a reasonable starting point for the calculation of linear and nonlinear susceptibilities within the independent-particle approximation. However, this approach has to be improved by taking into account many-body interactions: self-energy effects, local-field corrections, and electron-hole attraction. Three types of optical spectra are studied: the frequency-dependent dielectric function, the second-harmonic generation, and surface reflectance anisotropy spectra. The systems considered are two-atomic semiconductors, their polytypes and their surfaces
Disciplinas: Física y astronomía
Palabras clave: Física de materia condensada,
Optica,
Semiconductores,
Propiedades ópticas,
Cálculos ab initio,
Susceptivilidad,
Función dieléctrica,
Reflectancia
Keyword: Physics and astronomy,
Condensed matter physics,
Optics,
Semiconductors,
Optical properties,
Ab-initio,
Susceptivility,
Dielectric function,
Reflectance
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