| Revista: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000158902 |
| ISSN: | 0103-9733 |
| Autores: | Capaz, R.B1 Assali, L.V.C2 Kimerling, L.C3 Cho, K4 Joannopoulos, J.D5 |
| Instituciones: | 1Universidade Federal do Rio de Janeiro, Instituto de Física, Rio de Janeiro. Brasil 2Universidade de Sao Paulo, Instituto de Física, Sao Paulo. Brasil 3Massachusetts Institute of Technology, Department of Materials Science and Engineering, Cambridge, Massachusetts. Estados Unidos de América 4Stanford University, Mechanical Engineering Department, Stanford, California. Estados Unidos de América 5Massachusetts Institute of Technology, Department of Physics, Cambridge, Massachusetts. Estados Unidos de América |
| Año: | 1999 |
| Periodo: | Dic |
| Volumen: | 29 |
| Número: | 4 |
| Paginación: | 611-615 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico |
| Resumen en inglés | A novel microscopic mechanism for hydrogen-enhanced oxygen diffusion in p-doped silicon is proposed. A path for joint diffusion of O and H is obtained from an ab-initio molecular dynamics "kick" simulation. The migration pathway consists of a two-step mechanism, with a maximum energy of 1.46 eV. This path represents a 0.54 eV reduction in the static barrier when compared with the diffusion of isolated O in Si, in excellent agreement with experiments |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Física de materia condensada, Semiconductores, Silicio, Difusión de oxígeno, Dinámica molecular |
| Keyword: | Physics and astronomy, Condensed matter physics, Semiconductors, Silicon, Oxygen diffusion, Molecular dynamics |
| Texto completo: | Texto completo (Ver HTML) |
