| Revista: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000159247 |
| ISSN: | 0103-9733 |
| Autores: | Menchero, J.G1 |
| Instituciones: | 1Universidade Federal do Rio de Janeiro, Instituto de Física, Rio de Janeiro. Brasil |
| Año: | 1999 |
| Periodo: | Dic |
| Volumen: | 29 |
| Número: | 4 |
| Paginación: | 779-784 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico |
| Resumen en inglés | Acceptor binding energies in zinc-blende semiconductors are determined within the tight-binding formalism. The importance of fitting the valence-band masses in the (100) as well as (111) directions is discussed, and parametrizations that specifically fit the valence-band anisotropy are used to calculate Ge acceptor levels in AlxGa1-x As alloys. The sensitivity of the calculated energies to the parameters that determine bulk masses is investigated, as well as the effect of varying the on-site energy of the impurity. A comparison is made between first-neighbor and second-neighbor hopping models. For shallow levels, both approaches give the same results. For deeper levels, however, important differences arise. Experimental evidence suggests that first-neighbor models are better suited for describing intermediate to deep levels |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Física de materia condensada, Semiconductores, Niveles de energía, Aceptores, Zincblenda, Impurezas |
| Keyword: | Physics and astronomy, Condensed matter physics, Semiconductors, Energy levels, Acceptors, Zincblende, Impurities |
| Texto completo: | Texto completo (Ver HTML) |
