| Revista: | Superficies y vacío |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000404991 |
| ISSN: | 1665-3521 |
| Autores: | Navarro Quezada, A1 Rodríguez, A.G1 Vidal, M.A1 Hernández Sosa, G1 Navarro Contreras, H1 |
| Instituciones: | 1Universidad Autónoma de San Luis Potosí, Instituto de Investigación en Comunicación Optica, San Luis Potosí. México |
| Año: | 2003 |
| Periodo: | Dic |
| Volumen: | 16 |
| Número: | 4 |
| Paginación: | 42-44 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico |
| Resumen en inglés | Epitaxial single crystal films of Ge, with thickness from 0.2 to 2.4 µm, were grown on GaAs (001) by rf sputtering. These layers were characterized by High Resolution X-Ray Diffraction (HRXRD). Measured rocking curves show that pseudomorphic samples with good structural quality can be obtained by this growth technique. Asymmetrical reflections (115) and (-1-15) are used to determine the in-plane and in-growth lattice parameters of the grown films. From the behavior of these parameters and Ge diffraction peak broadening, with the layer thickness, an experimental value of 1.8 µm is obtained for the critical thickness of Ge grown on GaAs (001) |
| Disciplinas: | Física y astronomía, Ingeniería |
| Palabras clave: | Física de materia condensada, Ingeniería de materiales, Cristalografía, Películas delgadas, Epitaxia, Germanio, Arseniuro de galio |
| Keyword: | Physics and astronomy, Engineering, Condensed matter physics, Materials engineering, Crystallography, Thin films, Epitaxy, Germanium, Gallium arsenide |
| Texto completo: | Texto completo (Ver PDF) |
