| Revista: | Superficies y vacío |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000372976 |
| ISSN: | 1665-3521 |
| Autores: | Jiménez, A1 Ambrosio, R. C1 Mireles García, José1 García, D1 Hidalga, F.J. de la1 |
| Instituciones: | 1Universidad Autónoma de Ciudad Juárez, Instituto de Ingeniería y Tecnología, Ciudad Juárez, Chihuahua. México |
| Año: | 2013 |
| Periodo: | Mar |
| Volumen: | 26 |
| Número: | 1 |
| Paginación: | 1-3 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Aplicado, descriptivo |
| Resumen en inglés | A two-dimensional (2-D) simulation study of short channel and random dopant effects on threshold voltage lowering and fluctuations in 90 nm MOSFET's is presented. The systematic analysis of short channel and random dopant effects was carried out in 2-D on a scale to provide quantitative predictions. Simulations based on a single multigrid solution of the Poisson equation followed by the solution of a simplified current continuity equation are used in the simulations. Both short channel and random dopant effects, on threshold voltage fluctuations are simulated and discussed in MOSFET's. The simulation results will be the start point for the analysis of threshold voltage fluctuations through the comparison with analytical models based on dopant number fluctuations. The simulations show that the threshold voltage fluctuations are principally determined by the fluctuation in the dopant number |
| Disciplinas: | Ingeniería |
| Palabras clave: | Ingeniería eléctrica, Voltaje umbral, Efectos de canal corto, Dopaje, Fluctuación de voltaje |
| Keyword: | Engineering, Electrical engineering, Threshold voltage, Short channel effects, Doping, Voltage fluctuation |
| Texto completo: | Texto completo (Ver HTML) |
