Sensing system with an artificial neural network based on floating-gate metal oxide semiconductor transistors



Título del documento: Sensing system with an artificial neural network based on floating-gate metal oxide semiconductor transistors
Revista: Revista mexicana de física
Base de datos: PERIÓDICA
Número de sistema: 000439017
ISSN: 0035-001X
Autores: 1
2
2
3
Instituciones: 1Universidad Autónoma del Estado de Hidalgo, Instituto de Ciencias Básicas e Ingeniería, Mineral de la Reforma, Hidalgo. México
2Instituto Politécnico Nacional, Centro de Investigación y de Estudios Avanzados, Ciudad de México. México
3Universidad de Guadalajara, Facultad de ingeniería, Guadalajara, Jalisco. México
Año:
Periodo: Ene-Feb
Volumen: 66
Número: 1
País: México
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Analítico, teórico
Resumen en inglés This paper shows a novel design of a gas sensor system based on artificial neural networks and floating-gate metal oxide semiconductor transistors. Two types of circuits with floating-gate metal oxide semiconductor transistors of minimum dimensions were designed and simulated by Simulink of Matlab; simulations and experimental measurements results were compared, obtaining good expectations. The reason for using floating-gate metal oxide semiconductor is that artificial neural networks can also be implemented with these kinds of devices, since artificial neural networks based on floating-gate metal oxide semiconductors are able to produce pseudo-Gaussian-functions. These functions give a reliable option to determine gas concentration. A sensitive thin film can be deposited on the floating-gate metal oxide semiconductor floating gate, which produces a charge variation due to the chemical reaction between the sensitive layer and the gas species, modifying the threshold voltage thereby a correlation of drain current of the floating-gate metal oxide semiconductor with gas concentration can be obtained. Therefore, a generator circuit was implemented for the pseudo Gaussian signal with the floating-gate metal oxide semiconductor. This system can be applied in environments with dangerous species such as CO2, CO, methane, propane, among others. Simulations demonstrated that the implemented proposal has a good performance as an alternative method for sensing gas concentrations, compared with conventional sensors
Disciplinas: Física y astronomía
Palabras clave: Física,
Sensor de gas,
Semiconductor de óxido metálico de puerta flotante,
Redes neuronales artificiales
Keyword: Physics,
Gas sensor,
Floating-gate metal oxide semiconductor,
Artificial neural networks
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