| Revista: | Revista mexicana de física |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000460728 |
| ISSN: | 0035-001X |
| Autores: | Mercado Ornelas, C.A1 Espinosa Vega, L.I1 Cortes Mestizo, I.E1 Yee Rendón, C.M2 Eugenio López, E1 Olvera Enriquez, J.P1 Perea Parrales, F.E1 Belio Manzano, A1 Méndez García, V.H1 |
| Instituciones: | 1Universidad Autónoma de San Luís Potosí, Centro para la Innovación y Aplicación de la Ciencia y la Tecnología, San Luis Potosí. México 2Universidad Autónoma de Sinaloa, Facultad de Ciencias Físico-Matemáticas, Culiacán, Sinaloa. México 3Johannes Kepler University Linz, Centro de Superficies y Nanoanálisis, Linz, Oeberoesterreich. Austria |
| Año: | 2022 |
| Periodo: | May-Jun |
| Volumen: | 68 |
| Número: | 3 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico, teórico |
| Resumen en inglés | In this work the self-assembling of InAs quantum dots (QDs) within asymmetric barriers of (Al)GaAs is studied via reflection high energy electron diffraction (RHEED). A comparative study between the AlGaAs/InAs/GaAs interfaces and its mirror-like heterostructure GaAs/InAs/AlGaAs showed significant differences in the self-assembling and capping of the QDs. The critical thickness of InAs QDs was proven to be larger when it is grown on AlGaAs alloys, compared with the deposition on GaAs layers. This change is explained by the reduced mobility of In atoms on the Al-containing surfaces, for which the QDs density is increased. Through the in-situ analysis of diffusion parameters, it is concluded that the mobility of In atoms decreases the mass transport of 2D and 3D precursors that conduces to the self-assembling of the QDs nanoislands, modifying the rate at which the QDs are formed. Further, during the first stages of QDs capping it is observed that the III-V materials intermixing plays a predominant role. The nanoislands are less affected when are covered by AlGaAs in comparison with the GaAs capping, preserving the QDs morphology and avoiding materials alloying. By following the RHEED intensity behavior during the QDs capping, a model was proposed to obtain quantitative parameters for the smoothing process. High-resolution x-ray diffraction (HRXRD) measurements show the composition of sharp interfaces for the AlGaAs/InAs/GaAs heterostructure. Lastly, numerical simulations were performed to evaluate the strain changes using the experimental information as input data |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Física, Puntos cuánticos InAs, Pozos cuánticos asimétricos, Entremezclado, Interfases, Cepa |
| Keyword: | Physics, InAs-quantum dots, Asymmetric quantum wells, Intermixing, Interfaces, Strain |
| Texto completo: | Texto completo (Ver HTML) Texto completo (Ver PDF) |
