| Revista: | Revista mexicana de física |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000404276 |
| ISSN: | 0035-001X |
| Autores: | Li, Pengan1 Liu, Yihe1 Meng, Xianquan1 |
| Instituciones: | 1Wuhan University, School of Physics and Technology, Wuhan, Hubei. China |
| Año: | 2016 |
| Periodo: | May-Jun |
| Volumen: | 62 |
| Número: | 3 |
| Paginación: | 219-222 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico, teórico |
| Resumen en inglés | GaN nanowires and nanotubes have been successfully synthesized via the simple chemical vapor deposition method. NH3 flow rate was found to be a crucial factor in the synthesis of different type of GaN which affects the shape and the diameter of generated GaN nanostructures. X-ray diffraction confirms that GaN nanowires grown on Si(111) substrate under 900◦C and with NH3 flow rate of 50 sccm presents the preferred orientation growth in the (002) direction. It is beneficial to the growth of nanostructure through catalyst annealing. Transmission electron microscopy and scanning electron microscopy were used to measure the size and structures of the samples |
| Disciplinas: | Física y astronomía, Ingeniería |
| Palabras clave: | Física de materia condensada, Ingeniería de materiales, GaN, CVD, Nanotubos, Tem |
| Keyword: | Physics and astronomy, Engineering, Condensed matter physics, Materials engineering, GaN, CVD, Nanotubes, Tem |
| Texto completo: | Texto completo (Ver PDF) |
