| Revista: | Revista mexicana de física |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000450567 |
| ISSN: | 0035-001X |
| Autores: | Rojas Trigos, J.B1 López López, M2 Venegas, M.A2 Contreras Puente, G.S3 Jiménez Olartec, D3 Santana Rodríguez, G4 |
| Instituciones: | 1Instituto Politécnico Nacional, Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada, México, Distrito Federal. México 2Instituto Politécnico Nacional, Centro de Investigación y Estudios Avanzados, México, Distrito Federal. México 3Instituto Politécnico Nacional, Escuela Superior de Física y Matemáticas, México, Distrito Federal. México 4Universidad Nacional Autónoma de México,, Instituto de Investigaciones en Materiales, México, Distrito Federal. México |
| Año: | 2016 |
| Periodo: | Ene-Feb |
| Volumen: | 62 |
| Número: | 1 |
| Paginación: | 68-72 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico, teórico |
| Resumen en inglés | In this paper, n-type gallium nitride thin films were grown on p-type and n-type silicon substrates by Molecular Beam Epitaxy technique, employing an aluminum nitride layer as an insulator buffer coating. The samples constitute primary semiconductor-insulator-semiconductor or SIS heterostructures, on which silver electrical contacts were deposited superficially by sputtering for electrical characterization purposes. The current intensity vs. voltage curves, charge carriers density, diffusion coefficient and mobility of charge carriers were determined in darkness conditions. Under AM1.5 homogenous illumination, the samples exhibited relatively large open-circuit voltage values, but low values for energy conversion efficiencies. Additionally, the dependency in photon energy of the open-circuit voltage was determined, in the range 1.77 eV to 4.13 eV, showing a minimum in the energy corresponding to the GaN energy band gap. Finally we discuss the prevailing charge transfer mechanism |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Física, Caracterización eléctrica, Nitruro de galio, Epitaxia de haz molecular, Semiconductores |
| Keyword: | Efecto Hall, Physics, Electrical characterization, Gallium nitride, Hall effect, Molecular beam epitaxy, Semiconductors |
| Texto completo: | Texto completo (Ver HTML) Texto completo (Ver PDF) |
