| Revista: | Materials research |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000312506 |
| ISSN: | 1516-1439 |
| Autores: | Bernardi, M.I.B1 Lee, E.J.H Lisboa-Filho, P.N Leite, E.R Longo, E Varela, J.A2 |
| Instituciones: | 1Universidade Federal de Sao Carlos, Departamento de Quimica, Sao Carlos, Sao Paulo. Brasil 2Universidade Estadual Paulista "Julio de Mesquita Filho", Departamento de Quimica, Araraquara, Sao Paulo. Brasil |
| Año: | 2001 |
| Periodo: | Jul |
| Volumen: | 4 |
| Número: | 3 |
| Paginación: | 223-226 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Experimental |
| Resumen en inglés | Titanium oxide (TiO2) thin films were obtained using the MOCVD method. In this report we discuss the properties of a film, produced using a ordinary deposition apparatus, as a function of the deposition time, with constant deposition temperature (90 °C), oxygen flow (7,0 L/min) and substrate temperature (400 °C). The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and visible and ultra-violet region spectroscopy (UV-Vis). The films deposited on Si (100) substrates showed the anatase polycrystalline phase, while the films grown on glass substrates showed no crystallinity. Film thickness increased with deposition time as expected, while the transmittance varied from 72 to 91% and the refractive index remained close to 2.6 |
| Disciplinas: | Ingeniería |
| Palabras clave: | Ingeniería de materiales, Películas delgadas, Oxido de titanio, Microscopía electrónica de barrido, Microscopía de fuerza atómica, Propiedades |
| Keyword: | Engineering, Materials engineering, Thin films, Titanium oxide, Scanning electron microscopy, Atomic force microscopy, Properties |
| Texto completo: | Texto completo (Ver HTML) |
