| Revista: | Materials research |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000312474 |
| ISSN: | 1516-1439 |
| Autores: | Stem, N1 Cid, M |
| Instituciones: | 1Universidade de Sao Paulo, Escola Politecnica, Sao Paulo. Brasil |
| Año: | 2001 |
| Volumen: | 4 |
| Número: | 2 |
| Paginación: | 143-148 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Experimental |
| Resumen en inglés | Considering recent modifications on n-type highly doped silicon parameters, an emitter optimization was made based on one-dimensional models with analytical solutions. In order to get good accuracy, a fifth order approximation has been considered. Two kinds of emitters, homogeneous and non-homogeneous, with phosphorus Gaussian profile emitter solar cells were optimized. According to our results: homogeneous emitter solar cells show their maximum efficiencies (h @ 21.60-21.74%) with doping levels Ns = 1x1019 - 5x1018 (cm-3) and (1.2-2.0) mm emitter thickness range. Non-homogeneous emitter solar cells provide a slightly higher efficiency (h = 21.82-21.92%), with Ns = 1x1020 (cm-3) with 2.0 mm thickness under metal-contacted surface and Ns = 1x1019 - 5x1018 (cm-3) with (1.2-2.0) mm thickness range, (sheet resistance range 90-100 W/ ) under passivated surface. Although non-homogeneous emitter solar cells have a higher efficiency than homogeneous emitter ones, the required technology is more complex and their overall interest for practical applications is questionable |
| Disciplinas: | Ingeniería |
| Palabras clave: | Ingeniería eléctrica, Energía solar, Homogeneidad, Eficiencia |
| Keyword: | Engineering, Electrical engineering, Solar energy, Homogeneity, Efficiency |
| Texto completo: | Texto completo (Ver HTML) |
