Revista: | Journal of applied research and technology |
Base de datos: | PERIÓDICA |
Número de sistema: | 000395671 |
ISSN: | 1665-6423 |
Autores: | Sait, Sadiq M1 Oughali, Feras Chikh1 Al-Asli, Mohammed1 |
Instituciones: | 1King Fahd University of Petroleum & Minerals, Center for Communications & IT Research, Dhahran. Arabia Saudita |
Año: | 2016 |
Periodo: | Feb |
Volumen: | 14 |
Número: | 1 |
Paginación: | 67-76 |
País: | México |
Idioma: | Inglés |
Tipo de documento: | Artículo |
Enfoque: | Aplicado, descriptivo |
Resumen en inglés | 3D integrated circuits (3D-ICs) is an emerging technology with lots of potential. 3D-ICs enjoy small footprint area and vertical interconnections between different dies which allow shorter wirelength among gates. Hence, they exhibit both lesser interconnect delays and power consumption. The design flow of 3D integrated circuits consists of many steps, the first of which is the 3D Partitioning and Layer Assignment. This step has a significant importance as its outcome will influence the performance of subsequent steps. Like other partitioning problems this one is also an NP-hard. The approach taken to address this critical task is the application of iterative heuristics (Sait & Youssef, 1999), as they have been proven to be of great value when it comes to handling such problems. Many aspects have been taken into consideration when attempting to solve this problem. These factors include layer assignment, location of I/O terminals, TSV minimization, and area balancing. Tabu Search and Simulated Annealing are employed and engineered to tackle this task. Results on well-known benchmarks show that both these techniques produce high quality solutions. The average percentage of the area deviation between layers is around 2.4% and the total number of required TSVs is reduced |
Disciplinas: | Ingeniería |
Palabras clave: | Ingeniería electrónica, Circuitos integrados, Silicón, Recocido simulado, Optimización combinatoria |
Keyword: | Engineering, Electronic engineering, Integrated circuits, Silicon, Simulated annealing, Combinatorial optimization |
Texto completo: | Texto completo (Ver HTML) |