| Revista: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000329388 |
| ISSN: | 0103-9733 |
| Autores: | Benoy, M.D1 Mohammed, E.M2 Suresh Babu M2 Binu P.J2 Pradeep, B3 |
| Instituciones: | 1Mar Athanasius College of Engineering, Department of Physics, Kerala. India 2Maharaja College, Department of Physics, Kerala. India 3Cochin University of Science and Technology, Department of Physics, Kochi Kerala. India |
| Año: | 2009 |
| Periodo: | Dic |
| Volumen: | 39 |
| Número: | 4 |
| Paginación: | 629-632 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Experimental |
| Resumen en inglés | Tin doped indium oxide thin films were prepared on glass substrates kept at room temperature, by activated reactive evaporation (ARE). Structural, electrical and optical properties were studied for films having different thickness. The resulting films are polycrystalline and show ≈ 90 % transmission in the visible region. Hall effect measurements at room temperature for a film with a nominal thickness of ≈ 350 nm shows a relatively high carrier concentration ≈ 6.3 × 1020 cm-3, mobility ≈ 16 cm2 V-1s-1, with a low resistivity ≈ 1.01×10-3W cm |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Física, Optica, Teoría cinética y plasmas, Películas delgadas, Oxido de estaño indio, Evaporación reactiva activada |
| Keyword: | Physics and astronomy, Kinetic theory and plasma, Optics, Physics, Thin films, Indium tin oxide, Activated reactive evaporation |
| Texto completo: | Texto completo (Ver HTML) |
