Thermal Diffusivity Measurement for p-Si and Ag/p-Si by Photoacoustic Technique



Título del documento: Thermal Diffusivity Measurement for p-Si and Ag/p-Si by Photoacoustic Technique
Revista: Brazilian journal of physics
Base de datos: PERIÓDICA
Número de sistema: 000389428
ISSN: 0103-9733
Autores: 1
1
1
1
Instituciones: 1Universiti Putra Malaysia, Faculty of Science, Serdang, Selangor. Malasia
Año:
Periodo: Oct
Volumen: 45
Número: 5
Paginación: 518-524
País: Brasil
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Experimental, aplicado
Resumen en inglés Thermal diffusivity (TD) of p-Si and Ag/p-Si samples were measured by photoacoustic technique using open photoacoustic cell (OPC). The samples were annealed by heating them at 960, 1050, 1200, and 1300 °C for 3 h in air. The thermal diffusivity of Ag-coated samples was obtained by fitting the photoacoustic experimental data to the thermally thick equation for Rosencwaig and Gersho (RG) theory. For the single layer samples, the thermal diffusivity can be obtained by fitting as well as by obtaining the critical frequency fc. In this study, the thermal diffusivity of the p-Si samples increased with increasing the annealing temperature. The thermal diffusivity of the Ag/p-Si samples, after reaching the maximum value of about 2.73 cm2 /s at a temperature of 1200 °C, decreased due to the silver complete melt in the surface of the silicon
Disciplinas: Física y astronomía
Palabras clave: Acústica,
Física,
Semiconductores,
Difusividad térmica,
Técnica fotoacústica
Keyword: Physics and astronomy,
Acoustics,
Physics,
Semiconductors,
Thermal diffusivity,
Photoacoustic techniques
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