The Dynamic Resistance of CdS/CdSe/ZnS Co-Sensitized TiO2 Solar Cells



Título del documento: The Dynamic Resistance of CdS/CdSe/ZnS Co-Sensitized TiO2 Solar Cells
Revista: Brazilian journal of physics
Base de datos: PERIÓDICA
Número de sistema: 000398965
ISSN: 0103-9733
Autores: 1
2
3
Instituciones: 1Dong Thap University, Faculty of Physics, Cao Lanh, Dong Thap. Vietnam
2Vietnam National University, University of Science, Ho Chi Minh City. Vietnam
3Vietnam National University, Ho Chi Minh City. Vietnam
Año:
Periodo: Dic
Volumen: 44
Número: 6
Paginación: 746-752
País: Brasil
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Analítico
Resumen en inglés Quantum dots' sensitized solar cells (QDSSCs) can create the high-performance and low-cost photovoltaic in the future. In this study, we synthesized the film of TiO2/CdS/CdSe/ZnS photoanodes by successive ionic layer adsorption reaction (SILAR) method. The absorption spectra, photoluminescent spectra and electrochemical impedance spectra (EIS) of the film TiO2/CdS/CdSe/ZnS photoanodes show that the structure of energy levels in the conduction band (CB) of photoanode materials CdS, CdSe, and ZnS quantum dots (QDs) can absorb a great number of photons in each region and inject stimulated electrons quickly into the conduction band (CB) of TiO2. Furthermore, we also studied the influence of the SILAR cycles on the dynamic resistance, the lifetime of electrons in QDSSCs through Nyquist and Bode
Disciplinas: Física y astronomía
Palabras clave: Física,
Puntos cuánticos,
Películas delgadas,
Celdas solares
Keyword: Physics and astronomy,
Physics,
Quantum dots,
Thin films,
Solar cells
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