| Revista: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000159063 |
| ISSN: | 0103-9733 |
| Autores: | Gusev, G.M1 Leite, J.R Olshanetskii, E.B Maude, D.K Casse, M Portal, J.C Moshegov, N.T Toropov, A.I |
| Instituciones: | 1Universidade de Sao Paulo, Instituto de Física, Sao Paulo. Brasil 2Russian Academy of Sciences, Institute of Semiconductor Physics, Novosibirsk. Rusia |
| Año: | 1999 |
| Periodo: | Dic |
| Volumen: | 29 |
| Número: | 4 |
| Paginación: | 715-718 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico |
| Resumen en inglés | We investigate the activated conductivity for Landau levels at lling factors v =1,2 in a parabolic AlxGa1-x As well down to 30 mK. We obtain a very small activation energy ~ 0.02 meV, which is almost 1-2 orders of magnitude smaller than the expected values for energy gaps in a wide quantum well. The resistivity minima vanish completely when a parallel component of magnetic field is applied. The collapse of the energy gaps in the wide parabolic well occurs due to the new electron correlated state, probably the charge density wave state predicted for a uniform wide electron slab in high magnetic field |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Física de materia condensada, Semiconductores, Efecto Hall cuántico, Resistividad, Pozos cuánticos, Niveles de Landau |
| Keyword: | Physics and astronomy, Condensed matter physics, Semiconductors, Quantum Hall effect, Resistivity, Quantum wells, Landau levels |
| Texto completo: | Texto completo (Ver HTML) |
