| Revista: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000392494 |
| ISSN: | 0103-9733 |
| Autores: | Kim, SeongMin1 Ha, Jaewook2 Kim, Jin-Baek2 |
| Instituciones: | 1Korea Advanced Institute of Science and Technology, Department of Chemistry, Daejeon. Corea del Sur 2Samsung Advanced Institute of Technology, Platform Technology Lab, Suwon-si, Gyeonggi-do. Corea del Sur |
| Año: | 2016 |
| Periodo: | Abr |
| Volumen: | 46 |
| Número: | 2 |
| Paginación: | 170-174 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Experimental, analítico |
| Resumen en inglés | The equation of p-n diode current-voltage (J-V) of an organic heterojunction (HJ) including a hole and electron buffer layer is derived, and its characteristics are numerically simulated based on a polaron-pair model Giebink et al. (Forrest, Phys. Rev. B 82; 1–12, 2010). In particular, the correlation between a fraction of the potential drop for an electron/hole buffer (δe − b/δh − b) and for a donor (D)/acceptor (A) (δD/δA) is numerically investigated for J-V curves. As a result, the lowest diode current (DC) is obtained for the condition of δe − b+δA ≅0 or δD +δh − b ≅1. It is suggested that it is important to characterize the lowest DC curve for the state of D/A blending with a condition of a fraction of the potential drop (δe − b/δh − b). Under these circumstances, the transport of holes (h+ ) from a DC source at the reverse bias is effectively limited |
| Disciplinas: | Ingeniería |
| Palabras clave: | Ingeniería electrónica, Semiconductores orgánicos, Heterojunturas orgánicas, Capas amortiguadoras, Diodos |
| Keyword: | Engineering, Electronic engineering, Organic semiconductors, Organic heterojunctions, Buffer layers, Diodes |
| Texto completo: | Texto completo (Ver PDF) |
