| Revista: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000159248 |
| ISSN: | 0103-9733 |
| Autores: | Bezerra, E.F1 Caetano, E.W.S Freire, V.N Silva-Junior, E.F. da Costa, J.A.P. da |
| Instituciones: | 1Universidade Federal do Ceara, Departamento de Física, Fortaleza, Ceara. Brasil 2Universidade Federal de Pernambuco, Departamento de Física, Recife, Pernambuco. Brasil 3Universidade Federal do Rio Grande do Norte, Departamento de Fisica Teorica e Experimental, Natal, Rio Grande do Norte. Brasil |
| Año: | 1999 |
| Periodo: | Dic |
| Volumen: | 29 |
| Número: | 4 |
| Paginación: | 785-789 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico |
| Resumen en inglés | A study of the subpicosecond high-field electron transport transient in 3C- and 6H-SiC polytypes at high lattice temperatures is performed. Electric field intensities up to 1000 kV/cm and lattice temperatures of 300, 673, and 1073 K are considered. It is shown that the transient regime behavior depends on the electric field intensity as well as on the lattice temperature, but it is always shorter or of the order of 0.3 ps. For the lowest lattice temperature, an electron velocity overshoot can always occur when the electric field intensity is higher than 300 kV/cm, but it decreases and can even disappear when the lattice temperature is raised |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Física de materia condensada, Semiconductores, Transporte de electrones, Transitorios, Redes |
| Keyword: | Physics and astronomy, Condensed matter physics, Semiconductors, Electron transport, Transients, Lattices, Networks |
| Texto completo: | Texto completo (Ver HTML) |
