| Revista: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000398962 |
| ISSN: | 0103-9733 |
| Autores: | Contreras Rascón J.I1 Díaz Reyes, J2 Castillo Ojeda, R.S3 Balderas López, J.A4 Arias Cerón, J.S5 Flores Mena, J.E6 |
| Instituciones: | 1Universidad del Valle de Puebla, Puebla. México 2Instituto Politécnico Nacional, Centro de Investigación en Biotecnología Aplicada, Tlaxcala. México 3Universidad Politécnica de Pachuca, Pachuca, Hidalgo. México 4Instituto Politécnico Nacional, Unidad Profesional Interdisciplinaria de Biotecnología, México, Distrito Federal. México 5Benemérita Universidad Autónoma de Puebla, Instituto de Ciencias, Puebla. México 6Instituto Politécnico Nacional, Centro de Investigación y de Estudios Avanzados, México, Distrito Federal. México |
| Año: | 2014 |
| Periodo: | Dic |
| Volumen: | 44 |
| Número: | 6 |
| Paginación: | 726-732 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico |
| Resumen en inglés | In this work, the growth and characterization of cadmium selenide sulphur (CdSe1−ySy) deposited by chemical bath deposition (CBD) technique at the reservoir temperature of 20±2 °C are presented, varying the thiourea volume added to the growth solution in the range of 0–30 ml. The films chemical stoichiometry was determined by energy-dispersive X-ray spectroscopy (EDS). The X-ray diffraction (XRD) analysis and Raman scattering reveal that CdSe1−ySy-deposited films showed hexagonal wurtzite crystalline phase. The average size of the crystalline grain in relation to the sulphur volume varies in the range of 1.48–9.2 nm that was determined by using the Debye-Scherrer equation for the direction (100), which is confirmed by analyzing the grain average diameter by high-resolution transmission electron microscopy (HRTEM). Raman scattering shows that the lattice dynamics is characteristic of bimodal behaviour and the multipeak adjust of the first optical longitudinal mode for the CdSeS denotes, in all cases, the Raman shift of the characteristic peak in the range of 177–181 cm−1 of the CdSe crystals associated with the sulphur incorporation. CdSe1−ySy band gap energy can be varied from 1.86 to 2.11 eV by varying the thiourea volume added in the growth solution measured by transmittance at room temperature |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Física de materia condensada, Depósito por baño químico, Aleaciones, Películas delgadas |
| Keyword: | Physics and astronomy, Condensed matter physics, Chemical bath deposition (CBD), Alloys, Thin films |
| Texto completo: | Texto completo (Ver PDF) |
