| Revista: | Brazilian journal of physics |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000159298 |
| ISSN: | 0103-9733 |
| Autores: | Pinheiro, M.V.B1 Krambroc, K2 |
| Instituciones: | 1Comissao Nacional de Energia Nuclear, Centro de Desenvolvimento da Tecnologia Nuclear, Belo Horizonte, Minas Gerais. Brasil 2Universidade Federal de Minas Gerais, Instituto de Ciencias Exactas, Belo Horizonte, Minas Gerais. Brasil |
| Año: | 1999 |
| Periodo: | Dic |
| Volumen: | 29 |
| Número: | 4 |
| Paginación: | 806-809 |
| País: | Brasil |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico |
| Resumen en inglés | In this paper we present experimental evidence supporting that persistent behavior in the electronic and optical properties of bulk GaAs and AlGaAs can have different origins as: the metastability of a defect, the persistent charge transfer from a defect to another defect, and the transfer from a defect to the conduction band. In particular, we show three different cases in which defects are either directly or indirectly related to persistent changes of the optical absorption, the magnetic circular dichroism of the absorption (MCDA) and the photoconductivity (PC). The three cases are as follows: the transfer of EL2 to the metastable state EL20* in semi-insulating (SI) GaAs causing persistent quenching of the absorption and photoconductivity (PPCQ); the persistent transfer of electrons from stable EL20 to arsenic vacancies in lightly n-type GaAs; and the correlated appearance of persistent MCDA and photoconductivity in AlGaAs due to the photoionization of DX-centers |
| Disciplinas: | Física y astronomía |
| Palabras clave: | Física de materia condensada, Optica, Semiconductores, Propiedades electrónicas, Propiedades ópticas, Metaestabilidad, Defectos |
| Keyword: | Physics and astronomy, Condensed matter physics, Optics, Semiconductors, Electronic properties, Optical properties, Metastability, Defects |
| Texto completo: | Texto completo (Ver HTML) |
