Characterization of Co-evaporated Cu-Ag-In-Se Thin Films



Título del documento: Characterization of Co-evaporated Cu-Ag-In-Se Thin Films
Revista: Brazilian journal of physics
Base de datos: PERIÓDICA
Número de sistema: 000398961
ISSN: 0103-9733
Autores: 1
1
1
Instituciones: 1Middle East Technical University, Department of Physics, Ankara. Turquía
Año:
Periodo: Dic
Volumen: 44
Número: 6
Paginación: 719-725
País: Brasil
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Analítico
Resumen en inglés In this study, annealing effect on the structural, electrical, and optical characteristics of the quaternary CuAg-In-Se (CAIS) thin films was investigated. These samples were deposited by co-evaporation of the Cu, Ag, In2Se3, and Se sources at the substrate temperature of 300 °C. The structural properties of the thin films were analyzed by means of Xray diffraction, and the results indicated that all of the films were in the polycrystalline structure with the preferred orientation along (112) direction. From the optical measurements, the band gap values were found to vary between 1.38 and 1.45 eV with annealing processes. The temperature-dependent electrical conductivity of the samples was measured in the temperature range of 90–400 K. The films gained degenerate behavior with increasing annealing temperature. The carrier conduction mechanism was determined at high- and lowtemperature regions by comparing thermionic emission and hopping parameters. Photoconductivity of the as-grown film showed that there was an increase in conductivity with increasing illumination intensity. From this measurement, the variation of photocurrent as a function of illumination intensity was determined
Disciplinas: Física y astronomía
Palabras clave: Física de materia condensada,
Películas delgadas,
Evaporación térmica,
Cobre,
Plata,
Indio,
Selenio
Keyword: Physics and astronomy,
Condensed matter physics,
Thin films,
Thermal evaporation,
Copper,
Silver,
Indium,
Selenium
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