| Revista: | Superficies y vacío |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000404700 |
| ISSN: | 1665-3521 |
| Autors: | Portillo Moreno, O1 Lima Lima, H1 Lozada Morales, R2 Palomino Merino, R2 Soto, A.B3 Zelaya Angel, O3 |
| Institucions: | 1Benemérita Universidad Autónoma de Puebla, Facultad de Ciencias Químicas, Puebla. México 2Benemérita Universidad Autónoma de Puebla, Facultad de Ciencias Físico Matemáticas, Puebla. México 3Instituto Politécnico Nacional, Centro de Investigación y de Estudios Avanzados, México, Distrito Federal. México |
| Any: | 2002 |
| Període: | Dic |
| Volum: | 15 |
| Paginació: | 19-21 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico |
| Resumen en inglés | Thin films of cadmium carbonate (CdCO3) and cadmium sulfide (CdS) were grown onto glass, substrates by means of the chemical bath (CB) method. The temperature of the bath (Td) was selected in the interval 23 - 80 oC. At low temperatures, CdCO3 is the compound predominant in the layers. At high temperatures CdS is the compound deposited on the substrate. At intermediate Td-values a mixture of both materials are present, i.e., the gradual transition from an insulator (CdCO3) to a semiconductor (CdS) growth occurs when Td increases. Physical properties of films were studied by means of X-ray diffraction, and optical absorption. The forbidden energy band gap of direct transitions (Eg) was calculated by applying the a 2 µ (hn - Eg) relation to the optical absorption spectra |
| Disciplines | Física y astronomía, Ingeniería |
| Paraules clau: | Física de materia condensada, Ingeniería de materiales, Ingeniería química, Películas delgadas, Cadmio, Otavita, Semiconductores |
| Keyword: | Physics and astronomy, Engineering, Condensed matter physics, Chemical engineering, Materials engineering, Thin films, Cadmium, Otavite, Semiconductors |
| Text complet: | Texto completo (Ver PDF) |
