Restrained relaxation of stress in a MBE-grown thin film of CaF2 on (111) silicon
Título del documento: Restrained relaxation of stress in a MBE-grown thin film of CaF2 on (111) silicon
Revista: Superficies y vacío
Base de datos: PERIÓDICA
Número de sistema: 000404705
ISSN: 1665-3521
Autors: 1
2
3
4
Institucions: 1Benemérita Universidad Autónoma de Puebla, Facultad de Ciencias Físico Matemáticas, Puebla. México
2Benemérita Universidad Autónoma de Puebla, Instituto de Ciencias, Puebla. México
3University of Applied Sciences, Senftenberg, Brandeburgo. Alemania
4Universidad Nacional Mayor de San Marcos, Facultad de Ciencias Físicas, Lima. Perú
Any:
Període: Dic
Volum: 15
Paginació: 40-44
País: México
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Analítico
Resumen en inglés A rhombohedral symmetry of CaF2, grown by MBE on (111)Si to a thickness of 30 nm was found with the help of RBS and ion channeling measurements. This symmetry is caused by hampered stress relaxation and the build-up of planar strain of tensile type due to different thermal expansion coefficients of the deposit and the substrate on the one hand, and dislocation pinning during the cooling process of the sample, on the other. The strain field forces the epitaxial film to a rhombohedral instead of cubic structure, and a total misfit of 1.2% is generated, instead of the common 0.6%
Disciplines Física y astronomía,
Ingeniería
Paraules clau: Física de materia condensada,
Ingeniería de materiales,
Películas delgadas,
Fluoruro de calcio,
Haces moleculares,
Epitaxia
Keyword: Physics and astronomy,
Engineering,
Condensed matter physics,
Materials engineering,
Thin films,
Calcium fluoride,
Molecular beams,
Epitaxy
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