| Revista: | Superficies y vacío |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000404989 |
| ISSN: | 1665-3521 |
| Autors: | Zehe, A1 Ramírez, A1 |
| Institucions: | 1Benemérita Universidad Autónoma de Puebla, Facultad de Ciencias de la Electrónica, Puebla. México |
| Any: | 2003 |
| Període: | Dic |
| Volum: | 16 |
| Número: | 4 |
| Paginació: | 34-36 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico |
| Resumen en inglés | A new bonding state in highly doped and almost compensated semiconductors, the {donor-acceptor1-acceptor2}- AUGER molecule, and its existence region is determined in silicon-doped Ga1-xAlxAs by electron-beam excited luminescence measurements at low temperature. The main peak position and luminescence intensity of the donoracceptor recombination channel turns out to be affected in a characteristic manner by the existence of AUGER molecules at high excitation levels. Carrier transitions via two recombination channels can be generated, which involve the donor-acceptor pair transition at 1.8 eV, and a free-to-bound transition at 2.1 eV. We discuss luminescence data of Ga0.2Al0.8As, doped with 3⋅1018 cm-3 silicon atoms. Sample excitation is carried out by means of a focused electron beam inside a nitrogen cryostat. Experimental results are analyzed by use of a set of rate equations, incorporating a particular bonding state and an AUGER process. Good agreement between theoretical and experimental results is established |
| Disciplines | Física y astronomía, Ingeniería |
| Paraules clau: | Física de materia condensada, Ingeniería de materiales, Ingeniería electrónica, Semiconductores, Estado sólido, Luminiscencia, Silicio |
| Keyword: | Physics and astronomy, Engineering, Condensed matter physics, Electronic engineering, Materials engineering, Semiconductors, Solid state, Luminescence, Silicon |
| Text complet: | Texto completo (Ver PDF) |
