Revista: | Superficies y vacío |
Base de datos: | PERIÓDICA |
Número de sistema: | 000404983 |
ISSN: | 1665-3521 |
Autors: | Elyukhin, V.A1 Peña Sierra, R1 Rivera Flores, B.L1 |
Institucions: | 1Instituto Politécnico Nacional, Centro de Investigación y de Estudios Avanzados, México, Distrito Federal. México |
Any: | 2003 |
Període: | Dic |
Volum: | 16 |
Número: | 4 |
Paginació: | 6-13 |
País: | México |
Idioma: | Inglés |
Tipo de documento: | Artículo |
Enfoque: | Analítico |
Resumen en inglés | The AxB1−xCyD1− y alloys are the conventional materials of the semiconductor heterostructures for the optoelectronics device applications. The liquid phase epitaxy is one of the methods for preparation of the AxB1−xCyD1− y -based heterostructures. The liquid phase epitaxial processes are fulfilled near thermodynamic equilibrium. Therefore, information on the phase diagram and miscibility gap is necessary for the liquid phase epitaxy growth of the AxB1−xCyD1−y alloys. The phase equilibria in the heterogeneous systems with the AxB1−xCyD1− y alloy in the regular solution model are presented. The heterogeneous equilibria are considered as minimum condition of the Helmholtz free energy of the system that is presented as a canonical ensemble. The strictly regular approximation is used for description of all phases. The interactions between the nearest and next nearest atoms as well as the oscillation movement of the atoms are taken into account. The supposition on random distribution of the cations and anions in their sublattices is used for the configurational entropy. The numerical estimations are fulfilled for the phase diagram consisting of the ( ) In, Ga, Sb, As liquid solution and the xGa xSby As y In 1− 1− alloy lattice matched with the GaSb substrate. The obtained theoretical estimations are in good agreement with the available experimental results |
Disciplines | Física y astronomía, Ingeniería |
Paraules clau: | Física de materia condensada, Ingeniería de materiales, Ingeniería electrónica, Semiconductores, Optoelectrónica, Aleaciones, Indio, Galio, Antimonio, Arsénico |
Keyword: | Physics and astronomy, Engineering, Condensed matter physics, Electronic engineering, Materials engineering, Semiconductors, Optoelectronics, Alloys, Indium, Gallium, Antimony, Arsenic |
Text complet: | Texto completo (Ver PDF) |