| Revista: | Superficies y vacío |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000365824 |
| ISSN: | 1665-3521 |
| Autores: | Mota Pineda, E1 |
| Instituciones: | 1Instituto Politécnico Nacional, Escuela Superior de Ingeniería Mecánica y Eléctrica, México, Distrito Federal. México |
| Año: | 2012 |
| Periodo: | Dic |
| Volumen: | 25 |
| Número: | 4 |
| Paginación: | 231-233 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Experimental, aplicado |
| Resumen en inglés | SiO2/Si heterolayers were synthesized employing a RF magnetron sputtering system. For thin Si layers, it is shown that intrinsic voids on the SiO2 surface act as nucleation sites, promoting the formation of nanocrystals (NCs). As the deposition time of the Si layer increases it is observed that the influence of the SiO2 texture on the nucleation of Si nanocrystals diminishes. Studies carried out on samples grew on glass substrates shown that control in the NCs sizes allows to control the absorption edges of the synthesized samples between 300 and 700 nm. As-growth samples shown two photoluminescence bands around 570 and 660 nm, a band in the infrared region shows up and shifts toward the visible region as the Si layer thickness decreases |
| Disciplinas: | Ingeniería, Física y astronomía |
| Palabras clave: | Ingeniería de materiales, Optica, Silicio, Nanopartículas, Emisión de luz, Optoelectrónica |
| Keyword: | Engineering, Physics and astronomy, Materials engineering, Optics, Silicon, Nanoparticles, Light emission, Optoelectronics |
| Texto completo: | Texto completo (Ver HTML) |
