Revista: | Superficies y vacío |
Base de datos: | PERIÓDICA |
Número de sistema: | 000404891 |
ISSN: | 1665-3521 |
Autors: | Gordillo, G1 Calderón, C1 Bolaños, W1 Romero, E1 |
Institucions: | 1Universidad Nacional de Colombia, Departamento de Física, Bogotá. Colombia |
Any: | 2003 |
Període: | Jun |
Volum: | 16 |
Número: | 2 |
Paginació: | 12-15 |
País: | México |
Idioma: | Inglés |
Tipo de documento: | Artículo |
Enfoque: | Analítico |
Resumen en inglés | CuInSe2 thin films grown on soda lime glass substrate through a process which includes the chemical reaction between Cu and InxSey (IS) thin films deposited sequentially by evaporation, followed by annealing in Se atmosphere at 550 ºC, were characterized through spectral transmittance and XRD measurements. From the transmittance measurements the absorption coefficient and energy band gap was determined and the XRD measurements allowed us to identify the structure and phases present in the CIS compounds. Through a parameter study, the conditions to grow CIS thin film in chalcopyrite phase were found; this type of films presents good properties to be used as absorber layer in solar cells. The results revealed that the CIS films have an energy band gap of about 1.1 eV and absorption coefficient of the order of 105 cm-1 by wave lengths close to the cut off wavelength. The x-ray spectra were analyzed with the help of the Powder Cell simulation program in order to get information regarding the influence of the preferential growth and to improve the reliability of the phases identification |
Disciplines | Física y astronomía, Ingeniería |
Paraules clau: | Física de materia condensada, Ingeniería de materiales, Semiconductores, Películas delgadas, Celdas solares, Cobre, Indio, Selenio |
Keyword: | Physics and astronomy, Engineering, Condensed matter physics, Materials engineering, Semiconductors, Thin films, Solar cells, Copper, Indium, Selenium |
Text complet: | Texto completo (Ver PDF) |