| Revista: | Superficies y vacío |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000404982 |
| ISSN: | 1665-3521 |
| Autors: | Shiraki, Yasuhiro1 |
| Institucions: | 1University of Tokyo, Department of Applied Physics, Tokio. Japón |
| Any: | 2003 |
| Període: | Dic |
| Volum: | 16 |
| Número: | 4 |
| Paginació: | 1-5 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico |
| Resumen en inglés | SiGe heterostructure bipolar transistors are well developed and some of them are now commercially available, while many efforts are being paid on field-effect transistors. Extremely high mobility is demonstrated both for n- and p-channel transistors, which is brought by strain effects, and new devices compatible to Si LSIs are now under development. Optical devices based on Si substrates are also extensively studied by employing SiGe heterostructures. After reviewing these device applications, the future prospect of SiGe heterostructures is discussed |
| Disciplines | Física y astronomía, Ingeniería |
| Paraules clau: | Física de materia condensada, Ingeniería de materiales, Ingeniería electrónica, Crecimiento de cristales, Semiconductores, Silicio, Germanio, Transistores, Transistor de unión bipolar |
| Keyword: | Physics and astronomy, Engineering, Condensed matter physics, Electronic engineering, Materials engineering, Crystal growth, Semiconductors, Silicon, Germanium, Transistors, Bipolar junction transistor |
| Text complet: | Texto completo (Ver PDF) |
