Enhanced non steady photo-electromotive force in p-i-n structures



Título del documento: Enhanced non steady photo-electromotive force in p-i-n structures
Revista: Superficies y vacío
Base de datos: PERIÓDICA
Número de sistema: 000404755
ISSN: 1665-3521
Autors: 1
1
1
2
2
2
Institucions: 1Instituto Nacional de Astrofísica, Optica y Electrónica, Tonantzintla, Puebla. México
2Purdue University, Department of Physics, West Lafayette, Indiana. Estados Unidos de América
Any:
Període: Sep
Volum: 16
Número: 3
Paginació: 12-17
País: México
Idioma: Inglés
Tipo de documento: Artículo
Enfoque: Analítico
Resumen en inglés The Non-Steady State Photo-Electromotive Force (p-emf) consists in the generation of holographic currents. These currents are generated by an oscillatory interference pattern that impinges on the material. This technique is quite useful for electrical characterizations of the specimens; in addition to its usage for laser based ultrasound detection. The asgenerated currents can be measured in plane or vertically. P+ -i-n+ structures provide a natural way in which the vertical transport can be detected. P-emf was measured for first time to our knowledge in p+ -i-n+ structures in which the intrinsic layer was grown as a superlattice of 150 periods of 100Å GaAs wells and 40Å Al0.5Ga0.5As barriers at low temperature (310 °C); this multilayered region decreases up to thousands times the vertical mobility of the photocarriers; degrading the performance of the p-emf signal since the current is in direct relationship with the mobility of the photocarriers. A new design that overcomes this limit is proposed and grown for investigation of the holographic currents. A full optical and electrical characterization of the new structure is presented and discussed
Disciplines Física y astronomía,
Ingeniería
Paraules clau: Física de materia condensada,
Ingeniería de materiales,
Ingeniería electrónica,
Semiconductores,
Superredes,
Capas
Keyword: Physics and astronomy,
Engineering,
Condensed matter physics,
Electronic engineering,
Materials engineering,
Semiconductors,
Superlattices,
Layers
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