| Revista: | Superficies y vacío |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000378124 |
| ISSN: | 1665-3521 |
| Autores: | Velásquez Arriaga, A1 Hernández Rosas, J1 Ponce, H1 López López, M2 |
| Instituciones: | 1Instituto Politécnico Nacional, Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, México, Distrito Federal. México 2Instituto Politécnico Nacional, Centro de Investigación y de Estudios Avanzados, México, Distrito Federal. México |
| Año: | 2013 |
| Periodo: | Dic |
| Volumen: | 26 |
| Número: | 4 |
| Paginación: | 126-130 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Experimental, aplicado |
| Resumen en inglés | In this work, we calculate the electronic inter-band transitions in low dimensional nanostructures employing the effective mass approximation. With the help of the well-known models of square quantum well (SQW) and the symmetric square double quantum well (DQW), we calculate the energy levels in nanostructures commonly grown by molecular beam epitaxy (MBE) of III-V compound semiconductors. We choose in our calculations quantum wells (QWs) made of heterostructures without strain such as GaAs/AlxGa1-xAs, as well as heterostructures where the strain is very important such as InxGa1-xAs/GaAs and InAs/GaAs. We present our results showing the electronic transition energy versus the well width in the SQW case, or versus the middle barrier width in the DQW case. A discussion about the wave functions in the SQW and its coupling in the DQW is included |
| Disciplinas: | Ingeniería |
| Palabras clave: | Ingeniería de materiales, Ingeniería electrónica, Pozos cuánticos, Semiconductores compuestos, Heteroestructuras, Transiciones electrónicas |
| Keyword: | Engineering, Electronic engineering, Materials engineering, Quantum wells, Compund semiconductors, Heterostructures, Electronic transitions |
| Texto completo: | Texto completo (Ver HTML) |
