| Revista: | Superficies y vacío |
| Base de datos: | PERIÓDICA |
| Número de sistema: | 000404883 |
| ISSN: | 1665-3521 |
| Autors: | Mimila Arroyo, J1 Bland, S.W2 Lusson, A3 |
| Institucions: | 1Instituto Politécnico Nacional, Centro de Investigación y de Estudios Avanzados, México, Distrito Federal. México 2IQE (Europe) Limited, Cardiff. Reino Unido 3Centre National de la Recherche Scientifique, Laboratoire de Physique des Solides et de Cristallogenese, Meudon, Hauts-de-Seine. Francia |
| Any: | 2003 |
| Període: | Mar |
| Volum: | 16 |
| Número: | 1 |
| Paginació: | 37-39 |
| País: | México |
| Idioma: | Inglés |
| Tipo de documento: | Artículo |
| Enfoque: | Analítico |
| Resumen en inglés | Carbon thermal site switching dependence on carbon and carbon dimers concentration in GaAs layers is studied. The atomic carbon and dimer concentrations ranged from 0.4 - 2x1020 cm -3 and 0.1-1.5 x1019 cm -3 , respectively. The hole concentration as a function of the annealing time, increases from the "as grown" value to a intermediate maximum whereupon the hole concentration decreases before resuming its increase to a higher value. Such behavior is explained by a double-site switch of one carbon from the CAs-Ga-CAs dimer to an interstitial site and then to a substitutional one. The corresponding processes are first order. It is found that the corresponding involved kinetic coefficients are independent of the carbon and dimer concentrations |
| Disciplines | Física y astronomía, Ingeniería |
| Paraules clau: | Física de materia condensada, Ingeniería de materiales, Estado sólido, Compuestos, Galio, Arsénico, Carbono |
| Keyword: | Physics and astronomy, Engineering, Condensed matter physics, Materials engineering, Solid state, Compounds, Gallium, Arsenic, Carbon |
| Text complet: | Texto completo (Ver PDF) |
